*Additons by Rainer Glaschick

*MOSFET level 1, 2, 3 and 6 parameters:
*VTO    zero-bias threshold voltage		V		0.		1.
*KP     transconductance         		A/V/V   2e-5    3e-5
*GAMMA  bulk threshold         			sqrt(V) 0.      0.37
*PHI    surface potential         		V     	0.6       0.65
*LAMBDA channel-length modulation       1/V   	0.        0.02
*Rd     drain ohmic resistance   		Ohms    0.        1.
*Rs     source ohmic resistance  		Ohms    0.        1.
*Ron    drain-source (on) resistance 	Ohm		0.		  1.
*Rg		gate ohmic resistance			Ohm		0.		  1.
*Cbd    zero-bias B-D junction cap.    	F      	0.        20f
*Cbs    zero-bias B-S junction cap.		F		0.        20f
*Is     body diode saturation curr.  	A       1e-14    1e-15
*Rb  	body diode resistance
*N      bulk diode emission 	        1.
*Pb     bulk junction potential   		V       0.8       0.87


.model BS170 VDMOS( Vto=2.1 Ron=1.2 Kp=0.32 Cgs=12p Vds=60 mfg=Fairchild)
.model BS250 VDMOS(pchan Vto=-1.9 Ron=10 Kp=0.05 Cgs=15p Vds=-60 mfg=Fairchild )
.model BUZ71A VDMOS( Vto=3.0 Ron=0.1 Kp=3 Vds=50 Cgs=0.48n mfg=Valvo)
.model BUZ80 VDMOS( Vto=3.0 Ron=4 Kp=1 Vds=800 Cgs=1.6n mfg=Valvo)
.model IRF740 VDMOS( Vto=3V Ron=0.55 Kp=5.8 Vds=400 Cgs=1.4n Is=1p Rb=20m Qg=63n mfg=IR)  
.model IRF740-2 VDMOS( Vto=2V Ron=0.55 Kp=5.8 Vds=400 Cgs=1.4n Is=1p Rb=20m Qg=63n mfg=IR)
.model IRFB9N65A VDMOS( Vto=3V Ron=0.93 Kp=3.9 Vds=650 Cgs=1.4n Is=1p Rb=20m Qg=48n mfg=IR) 
*